List-I List-II (a) Zener Diode (i) Negative resistance (b) Tunnel Diode (ii) High current gain (c) Gunn diode (iii) voltage regulation (d) PIN diode (iv) High input impedance
List-I List-II (a) Venturi tube (i) Displacement (b) Optical tachometer (ii) Pressure (c) LVDT (iii) Flow (d) Pirani Gauge (iv) Velocity
List-I List-II (a) Frequency Modulation (i) Envelop detection (b) Double sideband suppressed carrier signal (ii) Companding (c) PCM (iii)Balance Modulator (d) Amplitude Modulation (iv) Pre-emphasis and deemphasis
List-I List-II (With respect to Magnetron (With respect to Magnetron peak average o/p power, dyty cycle) o/p power in Watts) (a) 25 W (i) 6250 (b) 50 W (ii) 5000 (c) 100 W (iii) 2500 (d) 150 W (iv) 1250
List-I List-II (a) AND (i) || (b) OR (ii) =! (c) NOT (iii) && (d) NOT EQUAL (iv) !
List-I List-II (Status flag w.r.t 8085) (Bit position) (a) Auxillary carry (i) 7 (b) Gign (ii) 6 (c) Zero (iii) 4 (d) Parity (iv) 2
List-I List-II (a) Solar Cell (i) Spontaneous emission (b) LED (ii) Stimulated emission (c) Laser (iii) Photovoltaic conversion (d) Reflex Klystron (iv) Velocity modulation
List-I List-II (a) ROM (i) Volatile memory (b) RAM (ii) Non-volatile memory (c) Magnetic Memory (iii) Erasable Programmable Read Only Memory (d) EPROM (iv) Permanent memory
List-I List-II (a) Bit (i) 16 bit (b) Byte (ii) 1 bit (c) Nibble (iii) 4 bit (d) 8086 (iv) 8 bit
List-I List-II With respect to copper film Surface resistance thickness (A ),resistivity (Ω-cm×10−7) (Ω / Square) (a) 100, 0.52 (i) 7.25 (b) 80, 0.58 (ii) 21.50 (c) 60, 0.68 (iii) 5.20 (d) 40, 0.86 (iv) 11.33
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